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COM : Communications orales sans actes dans un congrès international ou national

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  • COM.4.1.J. A. Schmidt, C. Longeaud, R. R. Koropecki, R. Arce, “Photoconductivity measurements used to determine the defect density within the gap of intrinsic semiconductors”, Hyperfine Interaction at La Plata, La Plata, Argentine, 7-10 Nov. 2005.

  • COM.4.2.M.E. Gueunier-Farret, J.-P. Kleider, C. Longeaud, "The modulated photocurrent technique: comparison of the high and low frequency regimes for the characterisation of bandgap states in thin films semiconductors", a-SiNet Workshop, Delft, 2-4 Février 2005.

  • COM.4.3.A.S. Gudovskikh, J.-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti, J. C. Muller, P.J. Ribeyron, E. Rolland, "(n)a-Si:H/pm-Si:H/p-Si heterojunction solar cells: fabrication, properties and perspectives", a-SiNet Workshop, Delft, 2-4 Février 2005.

  • COM.4.4.N. Dutta Gupta, C. Longeaud, A. Bhaduri, P. Chaudhuri, “Study of a-C:H films deposited from methane-argon mixture on the grounded and rf powered electrodes of a rf-PECVD Unit”, 13th International Workshop on the Physics of Semiconductor Devices, Delhi, Inde, 13-17 Décembre 2005.

  • COM.4.5.F. Houzé, J. Alvarez, J.-P. Kleider, P. Bergonzo, E. Snidero, D. Tromson, "Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy", Diamond 2005, Toulouse, 11-16 septembre 2005.

  • COM.4.6.A.S. Gudovskikh, J.-P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti, J.-C.Muller, P.-J. Ribeyron, E. Rolland, "Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy", E-MRS 2005, Strasbourg, 31 mai – 3 juin 2005.

  • COM.4.7.Y. Veschetti, J.-C.Muller, J. Damon-Lacoste, P. Roca i Cabarrocas, A. S. Gudovskikh, J.-P. Kleider, P.-J. Ribeyron, E. Rolland, "Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on p-type crystalline silicon substrates", E-MRS 2005, Strasbourg, 31 mai – 3 juin 2005.

  • COM.4.8. J.-P. Kleider, A. S. Gudovskikh, C. Godet, "Dc and ac hopping transport in metal / amorphous carbon nitride/ metal devices", 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 4-9 Septembre 2005, Lisbonne, Portugal.

  • COM.4.9.A.S. Gudovskikh, J.-P. Kleider, R. Stangl, "New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions", 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 4-9 Septembre 2005, Lisbonne, Portugal.

  • COM.4.10.J. Damon-Lacoste, P. Roca i Cabarrocas, A.S. Gudovskikh , J.-P. Kleider, Y. Veschetti, J.C. Muller, P.J. Ribeyron, "About the efficiency limits in HIT structures", 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 4-9 Septembre 2005, Lisbonne, Portugal.

  • COM.4.11.J. A. Schmidt, C. Longeaud, R. R. Koropecki, J.-P. Kleider, "Determination of the density of states of semiconductors from steady-state photoconductivity measurements", 21st International Conference on Amorphous and Nanocrystalline Semiconductors, 4-9 Septembre 2005, Lisbonne, Portugal.

  • COM.4.12.Z. Djebbour, A. Dubois, A. Darga, D. Mencaraglia, C. Bazin, J. P. Connolly, J.F. Guillemoles, B. Canava, and A. Etcheberry, “Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I-V-T measurements”, E-MRS 2006 Spring Meeting,  Nice, 29 mai – 2 juin 2006.

  • COM.4.13.J. Alvarez, "Local electrical and photoelectrical characterizations of diamond electronic devices by conducting probe atomic force microscopy", National Institute of Materials Science, 7 décembre 2006, Tsukuba, Japan.

  • COM.4.14.J. Alvarez, "Local electrical and photoelectrical characterizations of diamond electronic devices by conducting probe atomic force microscopy", National Institute of Materials Science, 7 décembre 2006, Tsukuba, Japan.

  • COM.4.15.Y. Koide, M. Liao, J. Alvarez, "Thermally stable solar-blind diamond UV-detectors", International Conference of New Diamond Science and Technology (ICNDST) and Advanced Diamond Conference (ADC) 2006 Joint Conference, May 15-18, 2006, (Triangle Research Park, NC, USA).

  • COM.4.16.J. Alvarez, “Développement et caractérisation de dispositifs diamant pour la détection UV”, Colloque national sur le diamant : Matériau et Physique : du Carbone Vers le Diamant, Grenoble (MPCVDiam), 22-23 Mars 2007.

  • COM.4.17.A.S. Gudovskikh, V. Lantratov, R. Chouffot, J. P. Kleider, J. Damon-Lacoste, D. Eon, P. Roca i Cabarrocas, P.-J. Ribeyron, "New method for interface characterisation in heterojunction solar cells based on diffusion capacitance measurements", E-MRS 2007 Spring Meeting, Strasbourg, 28 mai – 1 juin 2007.

  • COM.4.18.A.Ougazzaden, D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, T. Aggerstam, S. Ould Saad, J. Martin, Z. Djebbour, O. Durand, G. Garry, A. Lusson, D. McGrouther and J.N. Chapman, “Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates”, E-MRS 2007 Spring Meeting,  Strasbourg, 28 mai – 1 juin 2007.

  • COM.4.19.B.Godet, J. P. Kleider, A. Gudovskikh, "Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices", 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, Breckenridge, Colorado, USA, 19-24 août 2007.

  • COM.4.20.Y. M. Soro, A. Abramov, M. E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, J. P. Kleider, "Device grade hydrogenated polymorphous silicon deposited at high rates", 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, Breckenridge, Colorado, USA, 19-24 août 2007.

  • COM.4.21.P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P. P. Ray, C. Longeaud, “High diffusion length silicon germanium alloys thin films deposited by pulsed rf PECVD method”, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, Breckenridge, Colorado, USA, 19-24 août 2007.

  • COM.4.22.R. Chouffot, S. Ibrahim, R. Brüggemann, A. S. Gudovskikh, J. P. Kleider, M. Scherff, W. R. Fahrner, P. Roca i Cabarrocas, D. Eon, P.-J. Ribeyron, "Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells", 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, Breckenridge, Colorado, USA, 19-24 août 2007.

  • COM.4.23.J. P. Kleider, Y. M. Soro, R. Chouffot, A. S. Gudovskikh, P. Roca i Cabarrocas, J. Damon-Lacoste, D. Eon, P-J. Ribeyron, "High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions", 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS 22, Breckenridge, Colorado, USA, 19-24 août 2007.

  • COM.4.24.M. Y. Liao, J. Alvarez, Y. Koide, “ High responsitivity submicron metal−semiconductor−metal deep ultraviolet diamond detector ”, International Conference on Nanoscience & Technology (ChinaNANO 2007), Beijing, 4-6 Juin 2007.

  • COM.4.25.M. Y. Liao, J. Alvarez, Y. Koide, “Single Schottky−barrier diamond photodiode with interdigitated electrodes”, The First International Conference on New Diamond and Nano Carbons (NDNC2007), Osaka, 28-31 Mai 2007.

  • COM.4.26.D. Diouf, J. P. Kleider, T. Desrues, P-J. Ribeyron, "Study of interdigitated back contact silicon heterojunctions solar cells by two dimensional numerical simulations", E-MRS 2008 Spring Meeting, Strasbourg, 26-31 Mai 2008.

  • COM.4.27.R. Chouffot, A. Brezard-Oudot, J-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas, P.-J. Ribeyron, "Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells", E-MRS 2008 Spring Meeting, Strasbourg, 26-31 Mai 2008.

  • COM.4.28.A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, J-F. Guillemoles, J-P. Connolly, O. Roussel, D. Lincot, B. Canava and A. Etcheberry, "Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells", E-MRS 2008 Spring Meeting, Strasbourg, 26 – 30 mai 2008.

  • COM.4.29.S. Gautier, T. Aggerstam, A. Pinos, S. Marcinkevičius, K. Liu, M. Shur, S. M. O’Malley, A. A. Sirenko, Z. Djebbour, A. Migan, T. Moudakir and A. Ougazzaden, "AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas”, 14th International Conference of Metalorganic Vapor Phase Epitaxy (14th IC-MOVPE), Metz, 1st - 6th june 2008