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ACL : Articles dans des revues internationales ou nationales avec comité de lecture répertoriées dans les bases de données internationales

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ACL : Articles dans des revues internationales ou nationales avec comité de lecture répertoriées dans les bases de données internationales


  • ACL.4.1.H. Belgacem, A. Merazga, C. Longeaud, "Determination of defect levels parameters in semiinsulating GaAs:Cr from transient photocurrent experiment ", Semiconductor Science and Technology 20 (2005), pages 56 à 61. (Impact Factor ISI Wok =1,586)

  • ACL.4.2.S. Vignoli, P. Mélinon, B. Masenelli, P. Roca i Cabarrocas, A.M. Flank, C. Longeaud, "Over-coordination and order in hydrogenated nanostructured silicon thin films: their influence on strain and electronic properties", Journal of Physics : Condensed Matter 17 (2005) pages 1279 à 1288. (Impact Factor ISI Wok =2,038)

  • ACL.4.3.J. A. Schmidt and C. Longeaud, "Analysis of the steady states photocarrier grating method for the determination of the density of states in semiconductors ", Physical Review B 71, (2005) pages 125208-1 à 125208-19. (Impact Factor ISI Wok =3,107)

  • ACL.4.4.P. Chaudhuri, N. Dutta-Gupta, A. Bhaduri, C. Longeaud, S. Vignoli, O. Marty, "Study of powders formed at low power in a silane-argon discharge and their effect on the properties of hydrogenated amorphous silicon thin films", Journal of Applied Physics 98 (2005), pages 44913-1 à 44913-7. (Impact Factor ISI Wok =2,316)

  • ACL.4.5.J. A. Schmidt, C. Longeaud, J.-P. Kleider, "Light-intensity dependence of the steady state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors", Thin Solid Films 493 (2005) pages 319 à 324. (Impact Factor ISI Wok =1,666)

  • ACL.4.6.A.S. Gudovskikh, J.-P. Kleider, E.I. Terukov, "Characterization of a-Si:H/c-Si interface by admittance spectroscopy", Semiconductors 39 (2005) pages 903 à 909. (Impact Factor ISI Wok =0,624)

  • ACL.4.7.M. Meaudre, M. E. Gueunier-Farret, R. Meaudre, J.-P. Kleider, S. Vignoli, B. Canut, "Deep defects and their electron capture cross sections in polymorphous silicon-germanium thin films", Journal of Applied Physics 98 (2005) pages 33531-1 à 33531-7. (Impact Factor ISI Wok =2,316)

  • ACL.4.8.C. Longeaud, J. A. Schmidt, J. P. Kleider, “Determination of semiconductors band gap states parameters from photoconductivity measurements: I- Theoretical developments”, Phys. Rev. B 73 (2006), pp. 235316-1-20. (Impact Factor ISI Wok =3,107)

  • ACL.4.9.C. Longeaud, J. A. Schmidt, R. R. Koropecki, “Determination of semiconductors band gap states parameters from photoconductivity measurements: II- Experimental results”, Phys. Rev. B 73 (2006), 235317. (Impact Factor ISI Wok =3,107)

  • ACL.4.10.J. A. Schmidt, C. Longeaud, R. R. Koropecki, J. P. Kleider, “Parameters of the density of states in the gap of defective semiconductors determined from photoconductivity measurements”, J. of Non-Cryst. Solids 352 (2006), pp 1024-1027. (Impact Factor ISI Wok =1,362)

  • ACL.4.11.N. Dutta Gupta, C. Longeaud, P. Chaudhuri, A. Bhaduri, S. Vignoli, “Some Properties of amorphous carbon films deposited on the grounded electrode of a RF-PECVD reactor from Ar-CH4 mixtures”, J. Non-Cryst. Solids 352 (2006), pp 1307-1309. (Impact Factor ISI Wok =1,362)

  • ACL.4.12.S. Vignoli, P. Chauduhri, A. Bhaduri, N. Dutta Gupta, C. Longeaud, “Hydrogenated amorphous silicon-carbon alloys obtained from Ar-SiH4 – CH4 gas mixtures : structural and transport properties”, J. Non-Cryst. Solids 352 (2006), pp. 1384-1387. (Impact Factor ISI Wok =1,362)

  • ACL.4.13.M. E. Gueunier-Farret, C. Bazin, J. P. Kleider, C. Longeaud, P. Bulkin, D. Daineka, T. H. Dao, P. Roca I Cabarrocas, P. Descamps, T. Kervyn de Meerenedre, P. Loempoel, M. Meaudre, R. Meaudre, “Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates”, J. Non-Cryst. Solids 352 (2006), pp.1913-1916. (Impact Factor ISI Wok =1,362)

  • ACL.4.14.M. E. Gueunier-Farret, J. P. Kleider, F. Voigt, R. Brüggemann, G.H. Bauer, F. Huisken, "Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers”, J. Non-Cryst. Solids 352 (2006), pp. 1101-1104. (Impact Factor ISI Wok =1,362)

  • ACL.4.15.Y. Veschetti, J.-C. Muller, J. Damon-Lacoste, P. Roca i Cabarrocas, A. S. Gudovskikh, J. P. Kleider, P.-J. Ribeyron, E. Rolland, "Optimisation of amorphous and polymorphous thin silicon layers for formation of front-side heterojunction solar cells on p-type crystalline silicon", Thin Solid Films 511-512 (2006) pp. 543  547. (Impact Factor ISI Wok =1,666)

  • ACL.4.16.A. S. Gudovskikh, J. P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti, J.-C.Muller, P.-J. Ribeyron, E. Rolland, "Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy", Thin Solid Films 511-512 (2006), pp. 385 – 389. (Impact Factor ISI Wok =1,666)

  • ACL.4.17.J. Damon-Lacoste, P. Roca i Cabarrocas, P. Chatterjee, Y. Veschetti, A. S. Gudovskikh, J. P Kleider, P. J. Ribeyron "About the efficiency limits of heterojunction solar cells", J. Non-Cryst. Solids 352 (2006), pp. 1928 – 1932. (Impact Factor ISI Wok =1,362)

  • ACL.4.18.J. P. Kleider, A. S. Gudovskikh, C. Godet, "DC and AC hopping transport in metal/amorphous carbon nitride/metal devices", J. Non-Cryst. Solids 352 (2006), pp. 1323 – 1326. (Impact Factor ISI Wok =1,362)

  • ACL.4.19.A. S. Gudovskikh, J. P. Kleider, R. Stangl, "New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions", J. Non-Cryst. Solids 352 (2006), pp. 1213 – 1216. (Impact Factor ISI Wok =1,362)

  • ACL.4.20.F. Houzé, J. Alvarez, J. P. Kleider, P. Bergonzo, E. Snidero, D. Tromson, "Local electrical characterization of Schottky diodes on H-terminated diamond surfaces by conducting probe atomic force microscopy", Diamond and Related Materials 15 (2006), pp. 618 – 621. (Impact Factor ISI Wok =1,935)

  • ACL.4.21.C. Godet, J. P. Kleider, "Disorder and localization in bandtail hopping transport: Experiments and concepts", Journal of Materials Science: Materials in Electronics, 17 (2006), pp. 413-426. (Impact Factor ISI Wok =1,029)

  • ACL.4.22.Z. Djebbour, A. Darga, A. Migan Dubois, D. Mencaraglia, N. Naghavi, J.-F. Guillemoles and D. Lincot, “Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces”  Thin Solid Films 511-512 (2006), pp. 320-324. (Impact Factor ISI Wok =1,666)

  • ACL.4.23.Y. Koide, M. Liao, J. Alvarez, “Thermally stable solar-blind diamond UV detector”, Diamond and Related Materials 15 (2006), pp. 1962-1966. (Impact Factor ISI Wok =1,935)

  • ACL.4.24.J. Alvarez, F. Houzé, J.-P. Kleider, M. Liao, Y. Koide, “Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopy”, Superlattices and Microstructures 40 (2006), pp. 343-349. (Impact Factor ISI Wok =1,259)

  • ACL.4.25.M. Liao, Y. Koide, J. Alvarez, “Crystallographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode”, Journal of Vacuum Science and Technology B 24 (2006), pp. 185-189. (Impact Factor ISI Wok =1,597)

  • ACL.4.26.M. Liao, Y. Koide, J. Alvarez, “Photovoltaic Schottky ultraviolet detectors fabricated on boron-doped hormoepitaxial diamond layer”, Applied Physics Letters 88 (2006), pp. 033504-033506. (Impact Factor ISI Wok =3,977)

  • ACL.4.27.F. T. Reis, F. Santos, R. M. Faria, D. Mencaraglia, “Temperature dependent impedance spectroscopy on poly-aniline based devices”, IEEE Trans. Dielectr. Electr. Ins. 13(2006), pp. 1074-1081. (Impact Factor ISI Wok =0,771)

  • ACL.4.28.V. L. Berkovits, A. V. Ziminov, A. G. Kazanskii, A. G. Kolos’ko, E. I. Terukov, A. V. Fenukhin, V. P. Ulin, T. A. Yurre, J. P. Kleider, "Influence of the molecular structure of copper phtalocyanines on their ordering in thin films and, photoluminescence and absorption spectra", Physics of the Solid State 49 (2007), pp. 272-277. (Impact Factor ISI Wok =0,69)

  • ACL.4.29.A. S. Gudovskikh, J. P. Kleider, "Capacitance spectroscopy of amorphous/crystalline silicon heterojunction solar cells at forward bias and under illumination", Applied Physics Letters 90 (2007), pp. 034104-034107. (Impact Factor ISI Wok =3,977)

  • ACL.4.30.C. Godet, J. P. Kleider, A. S. Gudovskikh, "Scaling analysis of non-Ohmic bandtail hopping transport in amorphous carbon nitride", Phys. Stat. Solidi (b) 244 (2007) pp. 2081-2099. (Impact Factor ISI Wok =0,967)

  • ACL.4.31.A. S. Gudovskikh , S. Ibrahim, J. P. Kleider, J. Damon-Lacoste, P. Roca i Cabarrocas, Y. Veschetti, P.-J. Ribeyron, "Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: capabilities and limits", Thin Solid Films 515 (2007), pp. 7481-7485. (Impact Factor ISI Wok =1,666)

  • ACL.4.32.T. H. Dao, M. E. Gueunier-Farret, D. Daineka, P. Bulkin, P. Roca i Cabarrocas, J. P. Kleider, C. Longeaud, C. Bazin, T. Kervyn de Meerendre, P. Descamps, P. Leempoel, "Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by ECR", Thin Solid Films 515 (2007), pp. 7650-7653. (Impact Factor ISI Wok =1,666)

  • ACL.4.33.C. Godet, J. P. Kleider, A. S. Gudovskikh, "Frequency scaling of ac hopping transport in amorphous carbon nitride", Diamond and Related Materials 16 (2007), pp. 1799-1805. (Impact Factor ISI Wok =1,935)

  • ACL.4.34.J. Frejlich, R. Montenegro, N. R. Inocente Jr, P. V. Dos santos, J. C. Launay, C. Longeaud, J. F. Carvalho, “Phenomenological characterization of photoactive centers in Bi12TiO20 crystals”, J. Appl. Phys 101 (2007), 043101. (Impact Factor ISI Wok =2,316)

  • ACL.4.35.N. Dutta Gupta, C. Longeaud, C. Bazin, S. Vignoli, V. Paillard, A. Bandyopadhyay, A. Bhaduri, P. Chaudhuri, “Deposition of ultra violet photoconductive films of hydrogenated amorphous carbon”, J. Appl. Phys 101 (2007),103703. (Impact Factor ISI Wok =2,316)

  • ACL.4.36.J. A. Schmidt, C. Longeaud, R. R. Koropecki, R. Arce, “Low frequency modulated photoconductivity in semiconductors having multiple species of traps”, J. Appl. Phys 101 (2007), 103705. (Impact Factor ISI Wok =2,316)

  • ACL.4.37.C. Longeaud, H. Belgacem and C. Douay, “Density of states in Bi12TiO20 from time of flight measurements”, J. Phys.: Cond. Matter 19 (2007), 476202. (Impact Factor ISI Wok =2,038)

  • ACL.4.38.J. Alvarez , J. P. Kleider, F. Houze, M. Y. Liao and Y. Koide, “Local photoconductivity on diamond metal−semiconductor−metal photodetectors measured by conducting probe atomic force microscopy”, Diamond and related Materials 16 (2007), pp. 1074. (Impact Factor ISI Wok =1,935)

  • ACL.4.39.M. Y. Liao, Y. Koide, J. Alvarez, “Single Schottky−barrier photodiode with interdigitated−finger geometry: Application to diamond”, Applied Physics Letters 90 (2007), pp. 123507-123507-3. (Impact Factor ISI Wok =3,977)

  • ACL.4.40.M. Y. Liao, J. Alvarez, M. Imura M and Y. Koide, “Submicron metal−semiconductor−metal diamond photodiodes toward improving the responsivity”, Applied Physics Letters 91 (2007), pp. 163510. (Impact Factor ISI Wok =3,977)

  • ACL.4.41.Z. Djebbour, A. Migan Dubois, A. Darga, D. Mencaraglia, C. Bazin, J. P. Connolly, J.-F. Guillemoles, D. Lincot, B. Canava and A. Etcheberry “Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements”, Thin Solid Films, 515, (2007), pp. 6233-6237. (Impact Factor ISI Wok =1,666)

  • ACL.4.42.C. Longeaud and C. Main, “Deconvolution of the transient photocurrent signals : application to the study of the density of states of a BTO crystal”, J. Phys.: Cond. Matter 20 (2008), 135217. (Impact Factor ISI Wok =2,038)

  • ACL.4.43.C. Godet, J. P. Kleider, A. S. Gudovskikh, "Electric field-controlled sign of the capacitance in metal-carbon nitride-metal devices", Journal of Non-Crystalline Solids 354 (2008), pp. 2637-2640. (Impact Factor ISI Wok =1,362)

  • ACL.4.44.Y. M. Soro, A. Abramov, M. E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, J. P. Kleider, "Device grade hydrogenated polymorphous silicon deposited at high rates", Journal of Non-Crystalline Solids 354 (2008), pp. 2092-2095. (Impact Factor ISI Wok =1,362)

  • ACL.4.45.R. Chouffot, S. Ibrahim, R. Brüggemann, A. S. Gudovskikh, J. P. Kleider, M. Scherff, W.R. Fahrner, P. Roca i Cabarrocas, D. Eon, P.-J. Ribeyron: "Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells", Journal of Non-Crystalline Solids 354 (2008), pp. 2416-2420. (Impact Factor ISI Wok =1,362)

  • ACL.4.46.J. P. Kleider, Y. M. Soro, R. Chouffot, A. S. Gudovskikh, P. Roca i Cabarrocas, J. Damon-Lacoste, D. Eon, P-J. Ribeyron, "High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions", Journal of Non-Crystalline Solids 354 (2008), pp. 2441-2645. (Impact Factor ISI Wok =1,362)

  • ACL.4.47.J. A. Schmidt, C. Longeaud, R. R. Koropecki, R. Arce, J. P. Kleider, "Modulated photoconductivity in the high and low frequency regimes", Journal of Non-Crystalline Solids 354 (2008), pp. 2914-2917. (Impact Factor ISI Wok =1,362)

  • ACL.4.48.S. A. Filonovich, P. Alpuim , L. Rebouta , J.-E. Bourée , Y. M. Soro, "Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150 °C", Journal of Non-Crystalline Solids 354 (2008), pp. 2376-2380. (Impact Factor ISI Wok =1,362)

  • ACL.4.49.A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, T. Aggerstam, S. Ould Saad, J. Martin, Z. Djebbour, O. Durand, G. Garry, A. Lusson, D. McGrouther and J. N. Chapman, “Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates”, Journal of Crystal Growth 310 (2008), pp. 944-947. (Impact Factor ISI Wok =1,809)

  • ACL.4.50.P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P. P. Ray, C. Longeaud, “High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method”, Journal of Non-Crystalline Solids 354 (2008) 2105 (Impact Factor ISI Wok =1,362).

  • ACL.4.51.J. P. Kleider, A. S. Gudovskikh, P. Roca i Cabarrocas, "Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements", Appl. Phys. Lett. 92 (2008), pp. 162101-162103. (Impact Factor ISI Wok =3,977)

  • ACL.4.52.A. S. Gudovskikh, R. Chouffot, J. P. Kleider, N. A. Kaluzhniy, V. Lantratov, S. A. Mintairov, J. Damon-Lacoste, D. Eon, P. Roca i Cabarrocas, P.-J. Ribeyron: "New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements", Thin Solid Films 516 (2008), pp. 6786-6790. (Impact Factor ISI Wok =1,666)

  • ACL.4.53.Y. M. Soro, A. Abramov, M. E. Gueunier-Farret, E.V. Johnson, C. Longeaud, P. Roca i Cabarrocas, J. P. Kleider, "Polymorphous silicon thin films deposited at high rate: transport properties and density of states", Thin Solid Films 516 (2008), pp. 6888-6891. (Impact Factor ISI Wok =1,666)

  • ACL.4.54.P. Leempoel, P. Descamps, T. Kervyn de Meerendré, J. Charliac, P. Roca i Cabarrocas, P. Bulkin, D. Daineka, T.H. Dao, J. P. Kleider, M. E. Gueunier- Farret, C. Longeaud, "Distributed Electron Cyclotron Resonance plasma: a technology for large area deposition of device quality a-Si:H at very high rate", Thin Solid Films 516 (2008), pp. 6853-6857. (Impact Factor ISI Wok =1,666)

  • ACL.4.55.A. Darga, Z. Djebbour, D. Mencaraglia, A. Migan Dubois, J. P. Connolly, J. F. Guillemoles and D. Lincot, “Admittance spectroscopy measurement of defects density in electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances”, Physica Status Solidi (a), à paraître (2008). (Impact Factor ISI Wok =1,221)

  • ACL.4.56.A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, V. Bermúdez, J. P. Connolly, C. M. Ruiz and J.-F. Guillemolles, “Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition”, Thin Solid Films 516 (2008), pp. 6999-7003. (Impact Factor ISI Wok =1,666)

  • ACL.4.57.J. Sheran, Z. Djebbour, A. Migan Dubois, A. Darga, D. Mencaraglia, J. Kessler, N. Naghavi, D. Lincot and J-F. Guillemoles, "Sub gap modulated photo current spectroscopy performed on Cu(Inx,Ga1-x)(Sey,S1-y)2 based solar cells", accepté dans Thin Solid Films. (Impact Factor ISI Wok =1,666)

  • ACL.4.58.J. P. Kleider, R. Chouffot, A. S. Gudovskikh, P. Roca i Cabarrocas, M. Labrune, P.-J. Ribeyron, R. Brüggemann, "Characterization of amorphous/crystalline silicon interfaces", accepté dans Thin Solid Films. (Impact Factor ISI Wok =1,666)

  • ACL.4.59.D. Diouf, J. P. Kleider, T. Desrues, P-J. Ribeyron, "Study of interdigitated back contact silicon heterojunctions solar cells by two dimensional numerical simulations", accepté dans Materials Science and Engineering B. (Impact Factor ISI Wok =1,331)

  • ACL.4.60.R. Chouffot, A. Brezard-Oudot, J-P. Kleider, R. Brüggemann, M. Labrune, P. Roca i Cabarrocas, P.-J. Ribeyron, "Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells", soumis à Materials Science and Engineering B.

  • ACL.4.61.A. Bhaduri, P. Chaudhuri, D.L. Williamson, S. Vignoli, P. P. Ray, C. Longeaud, “Structural and optoelectronic properties of SiGe alloy thin films deposited by pulsed RF plasma CVD”, accepté dans J. Appl. Phys. (Impact Factor ISI Wok =2,316)

  • ACL.4.62.A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis and A. A. Sirenko, “Band gap bowing in BGaN thin films”, soumis à Applied Physics Letters.

  • ACL.4.63.Z. Djebbour, A. Darga, A. Migan Dubois, J. Sheran, D. Mencaraglia, B. Canava, A. Etcheberry, O. Roussel, J-F. Guillemoles and D. Lincot, "Bromine and cyanide chemical etching of CdS/CIGS solar cells heterinterfaces investigated by C-V measurements", soumis à Progress in Photovoltaics: Research and Applications

  • ACL.4.64.Z. Djebbour, J. Sheran, A. Migan Dubois and D. Mencaraglia, "Sub gap modulated photocurrent spectroscopy and its application to the study of the solar cell absorber defect distributions", soumis à Journal of Applied Physics.

  • ACL.4.65.S. Gautier, T. Aggerstam, A. Pinos, S. Marcinkevičius, K. Liu, M. Shur, S. M. O’Malley, A. A. Sirenko, Z. Djebbour, A. Migan, T. Moudakir and A. Ougazzaden, "AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas”, accepté dans Journal of Crystal Growth. (Impact Factor ISI Wok =1,809)

  • ACL.4.66.A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, J-F. Guillemoles, J-P. Connolly, O. Roussel, D. Lincot, B. Canava and A. Etcheberry, "Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells", accepté dans Thin Solid Films. (Impact Factor ISI Wok =1,666)

  • ACL.4.67.A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan Dubois, R. Chouffot, J. Sheran, F. Couzinié-Devy, N. Barreau and J. Kessler, "Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements", accepté dans Thin Solid Films. (Impact Factor ISI Wok =1,666)

  • ACL.4.68.M. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider, "Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors", Phys. Rev. B 78 (2008), pages 045112-1 à 045112-9. (Impact Factor ISI Wok =3,107)