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(112) ACL : Articles dans des revues internationales avec comité de lecture répertoriées dans les bases de données internationales


ACL.Int.4.112: S. Gaiaschi, R. Ruggeri, E. Johnson, P. Bulkin, P. Chapon, M. Gueunier-Farret, G. Mannino, C. Longeaud, J. Kleider, Structural properties of hydrogenated microcrystalline silicon-carbon alloys deposited by Radio Frequency - Plasma Enhanced Chemical Vapour Deposition: effect of microcrystalline silicon seed layer and methane flow rate, Thin Solid Films, Vol. 350, Issue: 1, 1 January 2014, pp. 312, doi: 10.1016/j.tsf.2013.11.081, .


ACL.Int.4.111: O. Maslova, A. Brézard-Oudot, M. Gueunier-Farret, J. Alvarez, W. Favre, D. Munoz, A. Gudovskikh, J. Kleider, Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets, Canadian Journal of Physics, Vol. 92, Issue: 7, 20 January 2014, pp. 690, doi: 10.1139/cjp-2013-0544, .


ACL.Int.4.110: S. Gaiaschi, M. Gueunier-Farret, E. Johnson, Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVD, Physica Status Solidi C, Vol. 11, Issue: 11, 1 November 2014, pp. 1665, doi: 10.1002/pssc.201400034, .


ACL.Int.4.109: J. Luckas, A. Olk, P. Jost, J. Alvarez, A. Jaffré, P. Zalden, A. Piarristeguy, A. Pradel, C. Longeaud, M. Wuttig, Impact of Maxwell rigidity transitions on resistance drift phenomena in GexTe12x glasses , Applied Physics Letters, Vol. 105, 15 September 2014, pp. 092108, doi: 10.1063/1.4893743, .


ACL.Int.4.108: J. Connolly, D. Mencaraglia, C. Renard, D. Bouchier, Designing III–V multijunction solar cells on silicon, Progress in Photovoltaics, Vol. 22, Issue: 7, 1 July 2014, pp. 810, doi: 10.1002/pip.2463, .


ACL.Int.4.107: M. Boutchich, H. Arezki, D. Alamarguy, K. Ho, H. Sediri, F. Günes, J. Alvarez, J. Kleider, C. Lai, A. Ouerghi, Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate, Applied Physics Letters, Vol. 105, Issue: 23, 10 December 2014, pp. 233111, doi: 10.1063/1.4903866, .


ACL.Int.4.106: R. Othmen, K. Rezgui, A. Cavanna, H. Arezki, F. Günes, H. Ajlani, A. Madouri, M. Oueslati, Improvement of the quality of graphene-capped InAs/GaAs quantum dots, Journal of Applied Physics, Vol. 115, 4 June 2014, pp. 214309, doi: 10.1063/1.4880338, .


ACL.Int.4.105: T. Mambrini, A. Migan-Dubois, C. Longeaud, M. Elyaakoubi, Outdoor characterisation of amorphous silicon based photovoltaic modules with different structures, Physica Status Solidi C, Vol. 11, Issue: 11, 1 November 2014, pp. 1711, doi: 10.1002/pssc.201400048, .


ACL.Int.4.104: J. Luckas, C. Longeaud, S. Siebentritt, Modulated photocurrent experiments-comparison of different data treatments, Journal of Applied Physics, Vol. 116, 11 September 2014, pp. 103710, doi: 10.1063/1.4894248, .


ACL.Int.4.103: J. Luckas, C. Longeaud, T. Bertram, S. Siebentritt, Metastable defects in CuInSe2 probed by modulated photocurrent experiment above 390 K, Applied Physics Letters, Vol. 104, 17 April 2014, pp. 153905, doi: 10.1063/1.4871666, .


ACL.Int.4.102: J. Alvarez, M. Boutchich, J. Kleider, T. Teraji, Y. Koide, Direct observation of the leakage current in epitaxial diamond Schottky barrier devices by conductive-probe atomic force microscopy and Raman imaging , Journal of Physics D: Applied Physics, Vol. 47, Issue: 35, 3 September 2014, pp. 355102, doi: 10.1088/0022-3727/47/35/355102, .


ACL.Int.4.101: S. Gaiaschi, R. Ruggeri, M. Gueunier-Farret, E. Johnson, Use of Radio Frequency Power, Silicon Tetrafluoride and Methane as Parameters to Tune Structural Properties of Hydrogenated Microcrystalline Silicon Carbon Alloys, Journal of Physics D: Applied Physics, Vol. 47, Issue: 45, 27 October 2014, pp. 455102, doi: 10.1088/0022-3727/47/45/455102, .


ACL.Int.4.100: V. Gorge, A. Migan-Dubois, Z. Djebbour, K. Pantzas, S. Gautier, T. Moudakir, S. Suresh, A. Ougazzaden, Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells, Materials Science and Engineering: B, Vol. 178, Issue: 2, 1 February 2013, pp. 142, doi: 10.1016/j.mseb.2012.10.033, .


ACL.Int.4.99: F. Marsolat, D. Tromson, N. Tranchant, M. Pomorski, D. Lazaro-Ponthus, C. Bassinet, C. Huet, S. Derreumaux, M. Chea, G. Boisserie, J. Alvarez, P. Bergonzo, Diamond dosimeter for small beam sterotactic radiotherapy, Diamond and Related Materials, Vol. 33, 1 March 2013, pp. 63, doi: http:/10.1016/j.diamond.2013.01.003, .


ACL.Int.4.98: O. Maslova, A. Brézard-Oudot, M. Gueunier-Farret, J. Alvarez, W. Favre, D. Munoz, J. Kleider, Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance, Applied Physics Letters, Vol. 103, Issue: 18, 30 October 2013, pp. 183907, doi: 10.1063/1.4826920, .


ACL.Int.4.97: C. Renard, N. Cherkasin, A. Jaffré, L. Vincent, A. Michel, T. Molière, R. Hamouche, V. Yam, J. Alvarez, F. Fossard, D. Mencaraglia, D. Bouchier, Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas, Applied Physics Letters, Vol. 102, Issue: 19, 17 May 2013, pp. 191915, doi: 10.1063/1.4807386, .


ACL.Int.4.96: C. Longeaud, An automated steady state photocarrier grating experiment, Review of scientific instruments, Vol. 84, Issue: 5, 1 May 2013, pp. 055101, doi: 10.1063/1.4803006, .


ACL.Int.4.95: A. Darga, D. Mencaraglia, C. Longeaud, T. Savenjije, B. ORegan, S. Bourdais, T. Muto, B. Delatouche, G. Dennler, On Charge Carrier Recombination in Sb2S3 and Its Implication for the Performance of Solar Cells, The Journal of Physical Chemistry C, Vol. 117, Issue: 40, 27 September 2013, pp. 20525, doi: 10.1021/jp4072394, .


ACL.Int.4.94: P. Mahtani, R. Varache, B. Jovet, C. Longeaud, J. Kleider, N. Kherani, Light induced changes in the amorphous – crystalline silicon heterointerface, Journal of Applied Physics, Vol. 114, Issue: 12, 24 September 2013, pp. 124503, doi: 10.1063/1.4821235, .


ACL.Int.4.93: R. Varache, J. Kleider, M. Gueunier-Farret, L. Korte, Silicon heterojunction solar cells: optimization of emitter and contact properties from analytical calculation and numerical simulation, Materials Science and Engineering: B, Vol. 178, Issue: 9, 15 May 2013, pp. 593, doi: 10.1016/j.mseb.2012.11.011, .


ACL.Int.4.92: S. Martin De Nicolas, J. Coignus, W. Favre, J. Kleider, D. Munoz, n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis, Solar Energy Materials & Solar Cells, Vol. 115, 1 August 2013, pp. 129, doi: 10.1016/j.solmat.2013.03.010, .


ACL.Int.4.91: J. Luckas, D. Krebs, S. Grothe, J. Klomfass, R. Carius, C. Longeaud, M. Wuttig, Defect in amorphous phase change materials, Journal of Materials Research, Vol. 28, Issue: 9, 9 May 2013, pp. 1139, doi: 10.1557/jmr.2013.72, .


ACL.Int.4.90: M. Boutchich, A. Jaffré, D. Alamarguy, J. Alvarez, A. Barras, Y. Tanizawa, R. Tero, H. Okada, T. Thu, J. Kleider, A. Sandhu, Characterization of graphene oxide reduced through chemical and biological processes, Journal of Physics: Conference Series, Vol. 433, Issue: 1, 1 January 2013, pp. 012001, doi: 10.1088/1742-6596/433/1/012001, .


ACL.Int.4.89: J. Luckas, A. Piarristeguy, G. Bruns, P. Jost, S. Grothe, R. Schmidt, C. Longeaud, M. Wuttig, Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys, Journal of Applied Physics, Vol. 113, Issue: 2, 9 January 2013, pp. 023704, doi: 10.1063/1.4769871, .


ACL.Int.4.88: M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, Z. Djebbour, J. Ryou, G. Patriarche, C. Larouci, L. Largeau, H. Kim, Z. Lochner, K. Pantzas, D. Alamarguy, F. Jomard, R. Dupuis, V. Sandana, J. Salvestrini, P. Voss, A. Ougazzaden, Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications, Applied Physics Letters, Vol. 100, Issue: 5, 30 January 2012, pp. 051101, doi: DOI: http://dx.doi.org/10.1063/1.3679703 , .


ACL.Int.4.87: K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynolds, P. Roca I Cabarrocas, Stress characterization of thin microcrystalline silicon films, International Review of Physics , Vol. 6, Issue: 1, 1 February 2012, pp. 106, .


ACL.Int.4.86: C. Longeaud, J. Schmidt, a-Si:H transport parameters from experiments based on photoconductivity, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2052, doi: DOI: 10.1016/j.jnoncrysol.2011.11.018, .


ACL.Int.4.85: C. Longeaud, J. Luckas, D. Krebs, R. Carius, J. Klomfass, M. Wuttig, On the density of states of germanium telluride, Journal of Applied Physics, Vol. 112, Issue: 11, 11 December 2012, pp. 113714, doi: DOI : 10.1063/1.4768725 , .


ACL.Int.4.84: C. Longeaud, J. Luckas, M. Wuttig, Some results on the Germanium telluride density of states, Journal of Physics: Conference Series, Vol. 398, Issue: 1, 10 December 2012, pp. 012007, doi: DOI :10.1088/1742-6596/398/1/012007, .


ACL.Int.4.83: A. Benvenuto, R. Buitrago, A. Badhuri, C. Longeaud, J. Schmidt, Characterization of thin polycrystalline silicon films deposited on glass by CVD, Semiconductor Science and Technology, Vol. 27, Issue: 12, 1 December 2012, pp. 125013, doi: DOI :10.1088/0268-1242/27/12/125013, .


ACL.Int.4.82: R. Varache, J. Kleider, W. Favre, L. Korte, Calculation and measurement of the band-bending in crystalline silicon as an optimization tool for silicon heterojunction solar cells, Journal of Applied Physics, Vol. 112, Issue: 12, 26 December 2012, pp. 123717, doi: DOI : 10.1063/1.4769736 , .


ACL.Int.4.81: K. Pantzas, G. Patriarche, G. Orsal, S. Gautier, T. Moudakir, M. Abid, V. Gorge, Z. Djebbour, P. Voss, A. Ougazzaden, Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials, Physica Status Solidi A, Vol. 209, Issue: 1, 4 January 2012, pp. 25-28, doi: 10.1002/pssa.201100154, .


ACL.Int.4.80: B. Halliop, M. Salaün, W. Favre, R. Varache, M. Gueunier-Farret, J. Kleider, N. Kherani, Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2227, doi: doi: 10.1016/j.jnoncrysol.2012.01.048, .


ACL.Int.4.79: M. Boutchich, J. Alvarez, D. Diouf, P. Roca I Cabarrocas, M. Liao, I. Masataka, Y. Koide, J. Kleider, Amorphous and microcrystalline silicon diamond based heterojunctions, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2110, doi: doi : 10.1016/j.jnoncrysol.2011.12.067, .


ACL.Int.4.78: O. Maslova, M. Gueunier-Farret, J. Alvarez, A. Gudovskikh, E. Terukov, J. Kleider, Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: theory, modeling, and experiments, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2007, doi: doi: 10.1016/j.jnoncrysol.2012.01.053, .


ACL.Int.4.77: R. Varache, W. Favre, L. Korte, J. Kleider, Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2236, doi: doi: 10.1016/j.jnoncrysol.2011.11.023, .


ACL.Int.4.76: A. Darga, W. Favre, M. Fruzzetti, J. Kleider, B. Morel, D. Mencaraglia, P. Yu, H. Marko, L. Arzel, N. Barreau, S. Noël, J. Kessler, Study of the electronic properties of wide bandgap CiGSe solar cells: influence of copper off-stoichiometry, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2428, doi: doi: 10.1016/j.jnoncrysol.2012.01.020, .


ACL.Int.4.75: D. Diouf, J. Kleider, I. Ngo, M. Gueunier-Farret, J. Alvarez, Nanowire solar cells using hydrogenated amorphous silicon: a modeling study, Physica Status Solidi a, Vol. 209, Issue: 6, 22 March 2012, pp. 1026, doi: doi: 10.1002/pssa.201100756, .


ACL.Int.4.74: O. Maslova, A. Brézard-Oudot, W. Favre, J. Alvarez, A. Gudovskikh, E. Terukov, J. Kleider, Characterization of the a-Si:H/c-Si interface by capacitance spectroscopy measurements: modeling and experiments, Physica Status Solidi c, Vol. 9, Issue: 6, 13 April 2012, pp. 1481, doi: doi: 10.1002/pssc.201100761, .


ACL.Int.4.73: I. Ngo, M. Gueunier-Farret, J. Alvarez, J. Kleider, Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance, EPJ Photovoltaics, Vol. 3, 18 July 2012, pp. 30102, doi: doi: 10.1051/epjpv/2012007, .


ACL.Int.4.72: F. Ventosinos, C. Longeaud, J. Schmidt, Density of states evaluations from oscillating/moving grating techniques, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2031, doi: doi: 10.1016/j.noncrysol.2011.12.046, .


ACL.Int.4.71: C. Longeaud, F. Ventosinos, J. Schmidt, Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques, Journal of Applied Physics, Vol. 112, Issue: 2, 27 July 2012, pp. 023709, doi: doi:10.1063/1.4737790, .


ACL.Int.4.70: P. Yu, A. Migan-Dubois, J. Alvarez, A. Darga, V. Vissac, D. Mencaraglia, Y. Zhou, M. Krueger, Study of traps in P3HT:PCBM based organic solar cells using fractional thermally stimulated current technique, Journal of Non-Crystalline Solids, Vol. 358, Issue: 17, 1 September 2012, pp. 2537, doi: doi: 10.1016/j.jnoncrysol.2012.01.021, .


ACL.Int.4.69: M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, Y. Koide, Comprehensive investigation of single crystal diamond deep-ultraviolet detectors, Jpn J. Appl. Physics, Vol. 51, 9 August 2012, pp. 090115, doi: doi: 10.1143/JJAP.51.090115, .


ACL.Int.4.68: J. Cho, B. ODonnell, L. Yu, K. Kim, I. Ngo, P. Roca I Cabarrocas, Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass, Progress in Photovoltaics: Research and Applications, Vol. 20, 13 January 2012, pp. 1245, doi: DOI: 10.1002/pip.1245, .


ACL.Int.4.67: F. Dadouche, O. Bethoux, J. Kleider, New silicon thin-film technology associated with original DC–DC converter: An economic alternative way to improve photovoltaic systems efficiencies, Energy, Vol. 36, Issue: 3, 1 March 2011, pp. 1749, doi: 10.1016/j.energy.2010.12.054 , url , pdf .


ACL.Int.4.66: J. Kleider, J. Alvarez, A. Ankudinov, A. Gudovskikh, E. Gushina, M. Labrune, O. Maslova, W. Favre, M. Gueunier-Farret, P. Roca I Cabarrocas, E. Terukov, Characterization of silicon heterojunctions for solar cells, Nanoscale Research Letters, Vol. 6, 16 February 2011, pp. 152, doi: 10.1186/1556-276X-6-152, .


ACL.Int.4.65: W. Favre, J. Kleider, D. Munoz, S. Martin De Nicolas, P. Ribeyron, Spatially resolved lifetime measurements of silicon heterojunctions from the modulated photoluminescence technique, Physica Status Solidi C, Vol. 8, 13 January 2011, pp. 775, doi: 10.1002/pssc.201000286, .


ACL.Int.4.64: F. Ventosinos, N. Budini, C. Longeaud, J. Schmidt, Analysis of the oscillating photocarrier grating technique, Journal of Physics D: Applied Physics, Vol. 44, Issue: 29, 5 July 2011, pp. 295103, doi: 10.1088/0022-3727/44/29/295103, .


ACL.Int.4.63: V. Gorge, Z. Djebbour, A. Migan-Dubois, C. Pareige, C. Longeaud, K. Pantzas, T. Moukadir, S. Gautier, G. Orsal, P. Voss, A. Ougazzaden, Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films, Applied Physics Letters, Vol. 99, Issue: 6, 11 August 2011, pp. 062113, doi: 10.1063/1.3624598, .


ACL.Int.4.62: J. Serhan, Z. Djebbour, D. Mencaraglia, F. Couzinié-Devy, N. Barreau, J. Kessler, Influence of Ga content on defects in CuInxGa1−xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy, Thin Solid Films, Vol. 519, Issue: 21, 31 August 2011, pp. 7312, doi: 10.1016/j.tsf.2011.01.095, .


ACL.Int.4.61: J. Serhan, Z. Djebbour, W. Favre, A. Migan-Dubois, A. Darga, D. Mencaraglia, N. Naghavi, G. Renou, J. Guillemoles, D. Lincot, Investigation of the metastability behavior of CIGS based solar cells with ZnMgO–Zn(S,O,OH) window-buffer layers, Thin Solid Films, Vol. 519, Issue: 21, 31 August 2011, pp. 7606, doi: 10.1016/j.tsf.2010.12.148 , .


ACL.Int.4.60: M. Abib, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier, A. En Naciri, A. Migan-Dubois, A. Ougazzaden, Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application, Journal of Crystal Growth, Vol. 315, Issue: 1, 15 January 2011, pp. 283, doi: 10.1016/j.jcrysgro.2010.09.008, .


ACL.Int.4.59: H. Marko, L. Arzel, A. Darga, N. Barreau, S. Noël, D. Mencaraglia, J. Kessler, Influence of Cu off-stoichiometry on wide band gap CIGSe solar cells, Thin Solid Films, Vol. 519, Issue: 21, 31 August 2011, pp. 7228, doi: 10.1016/j.tsf.2010.12.174, .


ACL.Int.4.58: C. Leendertz, N. Mingirulli, T. Schulze, J. Kleider, B. Rech, L. Korte, Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements , Applied Physics Letters, Vol. 98, Issue: 20, 20 May 2011, pp. 202108, doi: doi:10.1063/1.3590254, .


ACL.Int.4.57: J. Alvarez, J. Kleider, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, L. Mariucci, S. Rubini, Giant and reversible enhancement of the electrical resistance of GaAs1−xNx by hydrogen irradiation, Physical Review B, Vol. 84, Issue: 8, 31 August 2011, pp. 085331, doi: 10.1103/PhysRevB.84.085331, .


ACL.Int.4.56: J. Luckas, S. Kremers, D. Krebs, M. Salinga, M. Wuttig, C. Longeaud, The influence of a temperature dependent band gap on the energy scale of modulated photocurrent experiments, Journal of Applied Physics, Vol. 110, Issue: 1, 13 July 2011, pp. 013719, doi: 10.1063/1.3605517, .


ACL.Int.4.55: J. Alvarez, I. Ngo, M. Gueunier-Farret, J. Kleider, L. Yu, P. Roca I Cabarrocas, E. Rouvière, C. Celle, C. Mouchet, J. Simonato, Conductive-probe atomic force microscopy characterization of silicon nanowires, Nanoscale Research Letters, Vol. 6, 31 January 2011, pp. 110, doi: 10.1186/1556-276X-6-110, .


ACL.Int.4.54: F. Dadouche, O. Bethoux, M. Gueunier-Farret, E. Johnson, P. Roca I Cabarrocas, C. Marchand, J. Kleider, Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and μc-Si:H using computer simulation, EPJAP Photovoltaics, Vol. 2, 1 April 2011, pp. 20301, doi: 10.1051/epjpv/2011001, pdf .


ACL.Int.4.53: Y. Soro, M. Gueunier-Farret, J. Kleider, Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate, Journal of Applied Physics, Vol. 109, Issue: 2, 20 January 2011, pp. 023713, doi: 10.1063/1.3536474, .


ACL.Int.4.52: T. Desrues, S. De Vecchi, F. Souche, D. Diouf, D. Munoz, M. Gueunier-Farret, J. Kleider, P. Ribeyron, Development of Interdigitated Back Contact Silicon Heterojunction (IBC-Si HJ) Solar Cells, Energy Procedia , Vol. 8, 17 April 2011, pp. 294, doi: DOI:10.1016/j.egypro.2011.06.139, .


ACL.Int.4.51: J. Serhan, Z. Djebbour, A. Darga, D. Mencaraglia, N. Naghavi, G. Renou, D. Lincot, J. Guillemoles, Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)–ZnMgO interface buffer layers , Solar Energy Materials and Solar Cells, Vol. 94, Issue: 11, 2010, pp. 1884-1888, doi: doi:10.1016/j.solmat.2010.07.004 , pdf .


ACL.Int.4.50: E. Johnson, F. Dadouche, M. Gueunier-Farret, J. Kleider, P. Roca I Cabarrocas, Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells , Physica Status Solidi (a), Vol. 207, Issue: 3, March 2010, pp. 691-694, doi: DOI: 10.1002/pssa.200982723, pdf .


ACL.Int.4.49: A. Gudovskikh, J. Kleider, N. Kalyuzhnyy, V. Lantratov, S. Mintairov, Band structure at heterojunction interfaces of GaInP solar cells , Solar Energy Materials and Solar Cells, Vol. 94, Issue: 11, November 2010, pp. 1953-1958, doi: doi:10.1016:j.solmat.2010.06.027, pdf .


ACL.Int.4.48: A. Kazanskii, E. Terukov, P. Forsh, J. Kleider, Photoconductivity of two-phase hydrogenated silicon films , Semiconductors, Vol. 44, 2010, pp. 494-497, doi: , http://dx.doi.org/10.1134/S1063782610040159, pdf .


ACL.Int.4.47: W. Favre, M. Labrune, F. Dadouche, A. Gudovskikh, P. Roca I Cabarrocas, J. Kleider, Study of the interfacial properties of amorphous Silicon/n-type crystalline Silicon heterojunction through static coplanar conductance measurements , Physica Status Solidi (c), Vol. 7, Issue: 3, April 2010, pp. 1037-1040, doi: DOI: 10.1002/pssc.200982800, pdf .


ACL.Int.4.46: D. Diouf, J. Kleider, T. Desrues, P. Ribeyron, 2D simulations of interdigitated back contact heterojunctions solar cells based on n-type crystalline silicon , Physica Status Solidi c, Vol. 7, Issue: 3, April 2010, pp. 1033-1036, doi: DOI 10.1002/pssc.200982778, pdf .


ACL.Int.4.45: T. Desrues, P. Ribeyron, A. Vandenheynde, S. Ozanne, F. Souche, D. Munoz, C. Denis, D. Diouf, J. Kleider, B-Doped a-Si:H contact improvement on silicon heterojunctions solar cells and interdigitated back contact structure , Physica Status Solidi c, Vol. 7, Issue: 3, April 2010, pp. 1011-1015, doi: DOI: 10.1002/pssc.200982766, pdf .


ACL.Int.4.44: P. Yu, D. Mencaraglia, A. Darga, A. Migan-Dubois, R. Rabdbeh, B. Ratier, A. Moliton, Investigation of electric charge transport in conjugated polymer P3HT:PCBM solar cell with temperature dependent current and capacitance measurements , Physica Status Solidi (c), Vol. 7, Issue: 3, April 2010, pp. 1000-1004, doi: DOI: 10.1002/pssc.200982815, pdf .


ACL.Int.4.43: J. Schmidt, N. Budini, F. Ventosinos, C. Longeaud, Theoretical analysis and experimental results on the modulated photocarrier grating technique , Physica Status Solidi (a), Vol. 207, Issue: 3, 2010, pp. 556-560, doi: DOI 10.1002/pssa.200982707 , pdf .


ACL.Int.4.42: J. Luckas, D. Krebs, M. Salinga, M. Wuttig, C. Longeaud, Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5 , Physica Status Solidi (c), Vol. 7, Issue: 3, 2010, pp. 852-856, doi: iDOI 10.1002/pssc.200982694, pdf .


ACL.Int.4.41: J. Frejlich, C. Longeaud, J. Carvalho, Photoinduced Schottky Barrier in Photorefractive Materials , Phyical Review Letters, Vol. 104, 19 March 2010, pp. 116601, doi: DOI: 10.1103/PhysRevLett.104.116601, pdf .


ACL.Int.4.40: A. Badhuri, P. Chaudhuri, S. Vignoli, C. Longeaud, Correlation of structural inhomogeneities with transport properties in amorphous silicon germanium alloy thin films , Solar Energy Materials and Solar Cells, Vol. 94, Issue: 9, September 2010, pp. 1492-1495, doi: doi:10.1016/j.solmat.2010.02.043, pdf .


ACL.Int.4.39: Z. Djebbour, J. Serhan, A. Migan-Dubois, D. Mencaraglia, Subgap modulated photocurrent spectroscopy and its application to the study of the solar cell absorber defect distributions , Journal of Applied Physics, Vol. 108, Issue: 4, 2010, pp. 043707, doi: doi:10.1063/1.3456004 (, pdf .


ACL.Int.4.38: S. Gautier, G. Orsal, T. Moukadir, N. Maloufi, F. Jomard, M. Alnot, Z. Djebbour, A. Sirenko, M. Abid, K. Pantzas, I. Ferguson, P. Voss, A. Ougazzaden, Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content , Journal of Crystal Growth, Vol. 312, 2010, pp. 641-644, doi: doi:10.1016/j.jcrysgro.2009.11.040 , pdf .


ACL.Int.4.37: O. Maslova, J. Alvarez, E. Gushina, W. Favre, M. Gueunier-Farret, A. Gudovskikh, A. Ankudinov, E. Terukov, J. Kleider, Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions , Applied Physics Letters, Vol. 97, Issue: 25, 27 December 2010, pp. 252110, doi: doi:10.1063/1.3525166 , .


ACL.Int.4.36: C. Longeaud, P. Pratim Ray, A. Badhuri, D. Daineka, E. Johnson, P. Roca I Cabarrocas, Aluminium recycling from reactor walls: a source of contamination of a-Si:H films, Journal of Vacuum Science and Technology A, Vol. 28, Issue: 6, 22 October 2010, pp. 1381, doi: DOI : 10.1116/1.3503620 , .


ACL.Int.4.35: K. Christova, S. Alexandrova, A. Abramov, E. Valcheva, B. Ranguelov, C. Longeaud, S. Reynolds, P. Roca I Cabarrocas, Structure related strain and stress in thin hydrogenated microcrystalline silicon films, Journal of Physics: Conference Series, Vol. 253, Issue: 1, 7 December 2010, pp. 012056, doi: doi:10.1088/1742-6596/253/1/012056, .


ACL.Int.4.34: J. Serhan, Z. Djebbour, A. Migan-Dubois, A. Darga, D. Mencaraglia, N. Barreau, J. Kessler, N. Naghavi, D. Lincot, J. Guillemoles, Sub-Gap Modulated Photo Current Spectroscopy performed on Cu(Inx,Ga1−x)(Sey,S1−y)2 based solar cells, Thin Solid Films, Vol. 517, Issue: 7, February 2009, pp. 2256-2259, .


ACL.Int.4.33: Y. Koide, M. Liao, J. Alvarez, M. Imura, K. Sueishi, F. Yoshifusa, Schottky photodiode using submicron thick diamond epilayer for flame sensing , Nano-micro Letters, Vol. 1, Issue: 1, 2009, pp. 30-33, doi: doi: 10.5101/nml.v1i1.p30-33 , pdf .


ACL.Int.4.32: A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan-Dubois, R. Chouffot, J. Serhan, F. Couzinié-Devy, J. Kessler, Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements, Thin Solid Films, Vol. 517, Issue: 7, February 2009, pp. 2423-2426, .


ACL.Int.4.31: C. Longeaud, J. Schmidt, R. Koropecki, J. Kleider, Determination of hydrogenated amorphous silicon density of states parameters from photoconductivity measurements, Journal of optoelectronics and advanced materials, Vol. 11, Issue: 9, 2009, pp. 1064-1071, .


ACL.Int.4.30: M. Suproniuk, P. Kaminski, M. Miczuga, M. Pawlowski, R. Kozlowski, C. Longeaud, J. Kleider, An intelligent measurement system for diagnosing of semi-insulating materials by photoinduced transient spectroscopy , Przeglad Elektrotechniczny , Vol. 85, 2009, pp. 93, .


ACL.Int.4.29: M. Imura, M. Liao, J. Alvarez, Y. Koide, Schottky−barrier photodiode using p−diamond epilayer grown on p+−diamond substrates, Diamond and Related Materials, Vol. 18, 2009, pp. 296-298, .


ACL.Int.4.28: A. Gudovskikh, J. Kleider, R. Chouffot, N. Kalyuzhnyy, S. Mintairov, V. Lantratov, III-phosphides heterojunction solar cell interface properties from admittance spectroscopy, Journal of Physics D: Applied Physics, Vol. 42, 2009, pp. 165307-165315, .


ACL.Int.4.27: J. Alvarez, M. Liao, J. Kleider, Y. Koide, M. Imura, Ultraviolet Detectors Based on Ultraviolet–Ozone Modified Hydrogenated Diamond Surfaces, Applied Physics Express, Vol. 2, 2009, pp. 065501-065503, .


ACL.Int.4.26: C. Longeaud, J. Kleider, P. Kaminski, R. Kozlowski, M. Miczuga, Characterization of defect levels in semi−insulating 6H−SiC by means of photoinduced transient spectroscopyand modulated photocurrent technique, Journal of Physics : Condensed Matter , Vol. 21, 2009, pp. 045801-045815, .


ACL.Int.4.25: D. Diouf, J. Kleider, T. Desrues, P. Ribeyron, Study of interdigitated back contact silicon heterojonction solar cells by two dimensional numerical simulations , Material Science and Engineering B, Vol. 159, 2009, pp. 291-294, .


ACL.Int.4.24: R. Chouffot, A. Brézard-Oudot, J. Kleider, R. Brüggemann, M. Labrune, P. Roca I Cabarrocas, P. Ribeyron, Modulated photoluminescence as an effective lifetime measurement method : application to a-Si:H/c-Si heterojunction solar cells, Mat. Sci. Eng. B , Vol. 159, 2009, pp. 186-189, .


ACL.Int.4.23: C. Longeaud, S. Tobbeche, The influence of hopping on modulated photoconductivity, Journal of Physics : Condensed Matter , Vol. 21, 2009, pp. 045508, .


ACL.Int.4.22: A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan-Dubois, J. Guillemoles, J. Connolly, O. Roussel, D. Lincot, B. Canava, A. Etcheberry, Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells, Thin Solid Films, Vol. 517, Issue: 7, February 2009, pp. 2550-2553, .


ACL.Int.4.21: J. Kleider, R. Chouffot, A. Gudovskikh, P. Roca I Cabarrocas, M. Labrune, P. Ribeyron, R. Brüggemann, Electronic and structural properties of the amorphous/crystalline silicon interface, Thin Solid Films, Vol. 517, 1 October 2009, pp. 6386-6391, doi: DOI:10.1016/j.tsf.2009.02.092, pdf .


ACL.Int.4.20: A. Gudovskikh, R. Chouffot, J. Kleider, N. Kalyuzhnyy, V. Lantratov, S. Mintairov, J. Damon-Lacoste, D. Eon, P. Roca I Cabarrocas, P. Ribeyron, New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements, Thin Solid Films, Vol. 516, Issue: 20, 1 May 2008, pp. 6786, doi: DOI:10.1016/j.tsf.2007.12.021, .


ACL.Int.4.19: A. Ougazzaden, D. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, T. Aggerstam, S. Ould Saas, J. Martin, Z. Djebbour, O. Durand, G. Garry, A. Lusson, D. Mcgrouther, J. Chapman, Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates, Journal of Crystal Growth, Vol. 310, Issue: 5, 1 March 2008, pp. 944, doi: DOI:10.1016/j.jcrysgro.2007.11.137, .


ACL.Int.4.18: S. Filonovich, P. Alpuim, L. Rebouta, J. Bourée, Y. Soro, Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150 °C, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2376, doi: DOI:10.1016/j.jnoncrysol.2007.09.030, .


ACL.Int.4.17: P. Chaudhuri, A. Bhaduri, A. Bandyopadhyay, S. Vignoli, P. Pratim Ray, C. Longeaud, High diffusion length silicon germanium alloy thin films deposited by pulsed rf PECVD method, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2105, doi: DOI:10.1016/j.jnoncrysol.2007.09.077, .


ACL.Int.4.16: C. Longeaud, C. Main, Deconvolution of the transient photocurrent signals: application to the study of the density of states of a BTO crystal, Journal of Physics: Condensed Matter , Vol. 20, Issue: 13, 2 April 2008, pp. 135217, doi: DOI:10.1088/0953-8984/20/13/135217, .


ACL.Int.4.15: M. Imura, Y. Koide, M. Liao, J. Alvarez, Vertical-type Schottky-barrier photodiode using p-diamond epilayer grown on heavily boron-doped p+-diamond substrate, Diamond and Related Materials, Vol. 17, Issue: 11, 1 November 2008, pp. 1916, doi: DOI:10.1016/j.diamond.2008.04.012, .


ACL.Int.4.14: Y. Soro, A. Abramov, M. Gueunier-Farret, E. Johnson, C. Longeaud, P. Roca I Cabarrocas, J. Kleider, Polymorphous silicon thin films deposited at high rate: Transport properties and density of states, Thin Solid Films, Vol. 516, Issue: 20, 1 May 2008, pp. 6888, doi: DOI:10.1016/j.tsf.2007.12.123, .


ACL.Int.4.13: S. Gautier, T. Aggerstam, A. Pinos, S. Marcinkevicius, K. Liu, M. Shur, S. Omalley, A. Sirenko, Z. Djebbour, A. Migan-Dubois, T. Moudakir, A. Ougazzaden, AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas, Journal of Crystal Growth, Vol. 310, Issue: 23, 15 November 2008, pp. 4927, doi: DOI:10.1016/j.jcrysgro.2008.08.040, .


ACL.Int.4.12: A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. Kim, J. Ryou, R. Dupuis, A. Sirenko, Bandgap bowing in BGaN thin films , Applied Physics Letters, Vol. 93, Issue: 8, 28 August 2008, pp. 083118, doi: DOI:10.1063/1.2977588 , .


ACL.Int.4.11: A. Bhaduri, P. Chaudhuri, D. Williamson, P. Pratim Ray, C. Longeaud, Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition, Journal of Applied Physics, Vol. 104, Issue: 7, 23 September 2008, pp. 063709, doi: DOI:10.1063/1.2981190 , .


ACL.Int.4.10: A. Darga, Z. Djebbour, D. Mencaraglia, A. Migan-Dubois, J. Connolly, J. Guillemoles, D. Lincot, Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances, Physica Status Solidi c, Vol. 5, Issue: 11, 23 July 2008, pp. 3449, doi: 10.1002/pssc.200779437, .


ACL.Int.4.9: A. Darga, D. Mencaraglia, Z. Djebbour, A. Migan-Dubois, V. Bermudez, J. Connolly, C. Ruiz, J. Guillemoles, Analysis of electronic transport properties of thin film CuIn(S,Se)2 solar cells based on electrodeposition, Thin Solid Films, Vol. 516, Issue: 20, 30 August 2008, pp. 6999, doi: DOI:10.1016/j.tsf.2007.12.006, .


ACL.Int.4.8: M. Liao, Y. Koide, J. Alvarez, M. Imura, J. Kleider, Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors, Physical Review B, Vol. 78, Issue: 4, 21 July 2008, pp. 045112, doi: DOI:10.1103/PhysRevB.78.045112, .


ACL.Int.4.7: J. Kleider, A. Gudovskikh, P. Roca I Cabarrocas, Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements , Applied Physics Letters, Vol. 92, Issue: 16, 21 April 2008, pp. 162101, doi: DOI:10.1063/1.2907695, .


ACL.Int.4.6: C. Godet, J. Kleider, A. Gudovskikh, Electric field-controlled sign of the capacitance in metal–carbon nitride–metal devices, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2637, doi: DOI: 10.1016/j.jnoncrysol.2007.09.113, .


ACL.Int.4.5: Y. Soro, A. Abramov, M. Gueunier-Farret, E. Johnson, C. Longeaud, P. Roca I Cabarrocas, J. Kleider, Device grade hydrogenated polymorphous silicon deposited at high rates, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2092, doi: 10.1016/j.jnoncrysol.2007.10.047, .


ACL.Int.4.4: R. Chouffot, S. Ibrahim, R. Brüggemann, A. Gudovskikh, J. Kleider, M. Scherff, W. Fahrner, P. Roca I Cabarrocas, D. Eon, P. Ribeyron, Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2416, doi: DOI:10.1016/j.jnoncrysol.2007.09.032, .


ACL.Int.4.3: J. Kleider, Y. Soro, R. Chouffot, A. Gudovskikh, P. Roca I Cabarrocas, J. Damon-Lacoste, D. Eon, P. Ribeyron, High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2641, doi: DOI:10.1016/j.jnoncrysol.2007.09.087, .


ACL.Int.4.2: J. Schmidt, C. Longeaud, R. Koropecki, R. Arce, J. Kleider, Modulated photoconductivity in the high and low frequency regimes, Journal of Non-Crystalline Solids, Vol. 354, Issue: 19, 1 May 2008, pp. 2914, doi: DOI:10.1016/j.jnoncrysol.2007.09.104, .


ACL.Int.4.1: P. Leempoel, P. Descamps, T. Kervyn De Meerendré, J. Charliac, P. Roca I Cabarrocas, P. Bulkin, D. Daineka, T. Dao, J. Kleider, M. Gueunier-Farret, C. Longeaud, Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate, Thin Solid Films, Vol. 516, Issue: 20, 1 May 2008, pp. 6853, doi: DOI:10.1016/j.tsf.2007.12.045, .


(2) ACL : Articles dans des revues nationales avec comité de lecture répertoriées dans les bases de données internationales


ACL.Nat.4.2: J. Cho, B. ODonnell, L. Yu, K. Kim, I. Ngo, P. Roca I Cabarrocas, Sn-catalyzed silicon nanowire solar cells with 4.9% efficiency grown on glass, Progress in Photovoltaics Publisher Wiley-Blackwell ISSN 1062-7995 (eISSN : 1099-159X), Vol. 21, 1 January 2013, pp. 77-81, doi: 10.1002/pip.1245, .


ACL.Nat.4.1: O. Bethoux, J. Kleider, C. Jaouen, E. Lacombe, Etude Didactique des Systèmes Photovoltaïques : Optimisation Thermique et Electrique, La Revue 3EI, Vol. 52, March 2008, pp. 59-71, pdf .